High-stability ultrathin spin-on benzocyclobutene gate dielectric for polymer field-effect transistors

Abstract

The fabrication of gate dielectric layers over the semiconductor layer for polymer field-effect transistors, using a thermal-crosslinkable siloxane bisbenzocyclobutene (BCB), was discussed. It was observed that a surfactant-ion-exchanged PEDT:PSSR (R=long-chain surfactant cation) was used to improve spreading on the low-surface-energy crosslinked-BCB and to suppress channel doping effects. A method to develop thermal bonding of PEDT:PSS onto the BCB surface without using oxygen plasma which caused damage to the dielectric layer was also discussed. It was also observed that the current-electric-field characteristics of metal/BCB/metal structures has scaled the BCB thickness to 10 nm.