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Title: Ferroelectric behaviors of W-doped SrBi 2Ta 2O 9 thin films
Authors: Toh, W.S.
Garg, A.
Xue, J.M. 
Wang, J. 
Barber, Z.H.
Evetts, J.E.
Keywords: Ferroelectric films
Magnetron sputtering
SrBi 2Ta 1.8W 0.2O 9
W-doped SrBi 2Ta 2O 9
Issue Date: 2004
Citation: Toh, W.S., Garg, A., Xue, J.M., Wang, J., Barber, Z.H., Evetts, J.E. (2004). Ferroelectric behaviors of W-doped SrBi 2Ta 2O 9 thin films. Integrated Ferroelectrics 62 : 163-169. ScholarBank@NUS Repository.
Abstract: W-doped SrBi 2Ta 2O 9 (SBTW) thin films were deposited on Pt/Ti/SiO 2/Si substrates by off-axis magnetron sputtering of SrBi 2Ta 1.8W 0.2O 9. Annealing at 750°C in air led to a predominant (115) orientation, coupled with a dense surface morphology. The films demonstrated well-defined hysteresis loops, with a remanent polarization (2P r) of 12.6 μC/cm 2 and coercive field (2E c) of 137.5 kV/cm. A dielectric constant of 382 and a dielectric loss of 8% were measured for the SBTW thin films at 1.0 MHz. These ferroelectric and dielectric properties are much improved on those of SBT, by considering the fact that substitution of Ta 5+ by W 6+ can suppress oxygen vacancies in the layered perovskite lattice.
Source Title: Integrated Ferroelectrics
ISSN: 10584587
DOI: 10.1080/10584580490456515
Appears in Collections:Staff Publications

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