Please use this identifier to cite or link to this item: https://doi.org/10.1080/10584580490456515
Title: Ferroelectric behaviors of W-doped SrBi 2Ta 2O 9 thin films
Authors: Toh, W.S.
Garg, A.
Xue, J.M. 
Wang, J. 
Barber, Z.H.
Evetts, J.E.
Keywords: Ferroelectric films
Magnetron sputtering
SrBi 2Ta 1.8W 0.2O 9
W-doped SrBi 2Ta 2O 9
Issue Date: 2004
Source: Toh, W.S., Garg, A., Xue, J.M., Wang, J., Barber, Z.H., Evetts, J.E. (2004). Ferroelectric behaviors of W-doped SrBi 2Ta 2O 9 thin films. Integrated Ferroelectrics 62 : 163-169. ScholarBank@NUS Repository. https://doi.org/10.1080/10584580490456515
Abstract: W-doped SrBi 2Ta 2O 9 (SBTW) thin films were deposited on Pt/Ti/SiO 2/Si substrates by off-axis magnetron sputtering of SrBi 2Ta 1.8W 0.2O 9. Annealing at 750°C in air led to a predominant (115) orientation, coupled with a dense surface morphology. The films demonstrated well-defined hysteresis loops, with a remanent polarization (2P r) of 12.6 μC/cm 2 and coercive field (2E c) of 137.5 kV/cm. A dielectric constant of 382 and a dielectric loss of 8% were measured for the SBTW thin films at 1.0 MHz. These ferroelectric and dielectric properties are much improved on those of SBT, by considering the fact that substitution of Ta 5+ by W 6+ can suppress oxygen vacancies in the layered perovskite lattice.
Source Title: Integrated Ferroelectrics
URI: http://scholarbank.nus.edu.sg/handle/10635/107042
ISSN: 10584587
DOI: 10.1080/10584580490456515
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

3
checked on Feb 21, 2018

WEB OF SCIENCETM
Citations

3
checked on Jan 16, 2018

Page view(s)

27
checked on Feb 18, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.