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|Title:||Ferroelectric and electrical behavior of (Na0.5Bi 0.5)TiO3 thin films||Authors:||Zhou, Z.H.
|Issue Date:||2-Aug-2004||Citation:||Zhou, Z.H., Xue, J.M., Li, W.Z., Wang, J., Zhu, H., Miao, J.M. (2004-08-02). Ferroelectric and electrical behavior of (Na0.5Bi 0.5)TiO3 thin films. Applied Physics Letters 85 (5) : 804-806. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1771808||Abstract:||The growth of polycrystalline (Na0.5Bi0.5)TiO 3(NBT) thin films by radio-frequency magnetron sputtering and their ferroelectric behavior was reported. It was shown that the NBT thin films exhibit a well-defined hysteresis loop, with a remanent polarization of 11.9 μC/cm2 and coercive field of 37.9 kV/cm when measured at room temperature. A change in the controlling mechanism of electrical behavior from the grain interior to the grain boundary for the NBT thin film with increasing temperature was also observed. It was found that hopping of oxygen vacancies trapped at the grain boundaries was responsible for the high dielectric loss at low frequencies.||Source Title:||Applied Physics Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/107040||ISSN:||00036951||DOI:||10.1063/1.1771808|
|Appears in Collections:||Staff Publications|
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