First Demonstration of Waveguide-Integrated Black Phosphorus Electro-Optic Modulator for Mid-Infrared Beyond 4 μm
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Abstract
We demonstrate the first black phosphorus (BP) electro-optic modulator integrated with Si waveguide for the mid-infrared (MIR) spectrum from 3.85 to 4.1 μm. Optical properties of BP were effectively modulated by a vertical electric field from a top gate through Burstein-Moss and Franz-Keldysh effects. With a gate bias of -4 V, a modulation depth of ~5 dB was achieved with a small active footprint of merely 225 μm 2 . The modulation depth was observed to increase with decreasing light power. The results are promising for operations under weak-light condition with low-power consumption and compact footprint at room temperature. Our device lays a stepping stone towards realizing on-chip MIR systems for applications such as bio-sensing and environment monitoring.
Keywords
electro-optical modulation, elemental semiconductors, integrated optics, integrated optoelectronics, optical waveguides, photodetectors, semiconductor doping, silicon
Source Title
2019 IEEE International Electron Devices Meeting (IEDM)
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Series/Report No.
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Date
2020-02-13
DOI
10.1109/IEDM19573.2019.8993619
Type
Article