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|Title:||First Demonstration of Waveguide-Integrated Black Phosphorus Electro-Optic Modulator for Mid-Infrared Beyond 4 μm||Authors:||Li Huang
|Issue Date:||13-Feb-2020||Citation:||Li Huang, Bowei Dong, Yiming Ma, Chengkuo Lee, Kah-Wee Ang (2020-02-13). First Demonstration of Waveguide-Integrated Black Phosphorus Electro-Optic Modulator for Mid-Infrared Beyond 4 μm. 2019 IEEE International Electron Devices Meeting (IEDM) : 33.6.1 - 33.6.4. ScholarBank@NUS Repository. https://doi.org/10.1109/IEDM19573.2019.8993619||Abstract:||We demonstrate the first black phosphorus (BP) electro-optic modulator integrated with Si waveguide for the mid-infrared (MIR) spectrum from 3.85 to 4.1 μm. Optical properties of BP were effectively modulated by a vertical electric field from a top gate through Burstein-Moss and Franz-Keldysh effects. With a gate bias of -4 V, a modulation depth of ~5 dB was achieved with a small active footprint of merely 225 μm 2 . The modulation depth was observed to increase with decreasing light power. The results are promising for operations under weak-light condition with low-power consumption and compact footprint at room temperature. Our device lays a stepping stone towards realizing on-chip MIR systems for applications such as bio-sensing and environment monitoring.||Source Title:||2019 IEEE International Electron Devices Meeting (IEDM)||URI:||https://scholarbank.nus.edu.sg/handle/10635/189261||DOI:||10.1109/IEDM19573.2019.8993619|
|Appears in Collections:||Staff Publications|
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