Electronic structure of GaAs1-xNx alloys

Please use this identifier to cite or link to this item: https://doi.org/10.1016/S1369-8001(02)00021-5

Title:	Electronic structure of GaAs1-xNx alloys
Authors:	Tzu-Lin Lim, A. Feng, Y.P.
Issue Date:	Dec-2001
Citation:	Tzu-Lin Lim, A.,Feng, Y.P. (2001-12). Electronic structure of GaAs1-xNx alloys. Materials Science in Semiconductor Processing 4 (6) : 577-580. ScholarBank@NUS Repository. https://doi.org/10.1016/S1369-8001(02)00021-5
Abstract:	We have performed first-principles total-energy calculations based on pseudopotential and plane-wave method on ordered GaAs1-xNx alloys. We have found that the alloy is metallic at x≈0.25, has an indirect gap at 0.10
Source Title:	Materials Science in Semiconductor Processing
URI:	http://scholarbank.nus.edu.sg/handle/10635/98695
ISSN:	13698001
DOI:	10.1016/S1369-8001(02)00021-5
Appears in Collections:	Staff Publications

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