Please use this identifier to cite or link to this item: https://doi.org/10.1016/S1369-8001(02)00021-5
Title: Electronic structure of GaAs1-xNx alloys
Authors: Tzu-Lin Lim, A.
Feng, Y.P. 
Issue Date: Dec-2001
Source: Tzu-Lin Lim, A.,Feng, Y.P. (2001-12). Electronic structure of GaAs1-xNx alloys. Materials Science in Semiconductor Processing 4 (6) : 577-580. ScholarBank@NUS Repository. https://doi.org/10.1016/S1369-8001(02)00021-5
Abstract: We have performed first-principles total-energy calculations based on pseudopotential and plane-wave method on ordered GaAs1-xNx alloys. We have found that the alloy is metallic at x≈0.25, has an indirect gap at 0.10
Source Title: Materials Science in Semiconductor Processing
URI: http://scholarbank.nus.edu.sg/handle/10635/98695
ISSN: 13698001
DOI: 10.1016/S1369-8001(02)00021-5
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