Please use this identifier to cite or link to this item:
https://doi.org/10.1016/S1369-8001(02)00021-5
DC Field | Value | |
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dc.title | Electronic structure of GaAs1-xNx alloys | |
dc.contributor.author | Tzu-Lin Lim, A. | |
dc.contributor.author | Feng, Y.P. | |
dc.date.accessioned | 2014-10-16T09:50:18Z | |
dc.date.available | 2014-10-16T09:50:18Z | |
dc.date.issued | 2001-12 | |
dc.identifier.citation | Tzu-Lin Lim, A.,Feng, Y.P. (2001-12). Electronic structure of GaAs1-xNx alloys. Materials Science in Semiconductor Processing 4 (6) : 577-580. ScholarBank@NUS Repository. <a href="https://doi.org/10.1016/S1369-8001(02)00021-5" target="_blank">https://doi.org/10.1016/S1369-8001(02)00021-5</a> | |
dc.identifier.issn | 13698001 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/98695 | |
dc.description.abstract | We have performed first-principles total-energy calculations based on pseudopotential and plane-wave method on ordered GaAs1-xNx alloys. We have found that the alloy is metallic at x≈0.25, has an indirect gap at 0.10 | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/S1369-8001(02)00021-5 | |
dc.source | Scopus | |
dc.type | Conference Paper | |
dc.contributor.department | PHYSICS | |
dc.description.doi | 10.1016/S1369-8001(02)00021-5 | |
dc.description.sourcetitle | Materials Science in Semiconductor Processing | |
dc.description.volume | 4 | |
dc.description.issue | 6 | |
dc.description.page | 577-580 | |
dc.identifier.isiut | NOT_IN_WOS | |
Appears in Collections: | Staff Publications |
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