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https://doi.org/10.1063/1.2354446
Title: | Role of low temperature rapid thermal annealing in post-laser-annealed p-channel metal-oxide-semiconductor field effect transistor | Authors: | Ong, K.K. Pey, K.L. Lee, P.S. Wee, A.T.S. Wang, X.C. Tung, C.H. Tang, L.J. Chong, Y.F. |
Issue Date: | 2006 | Citation: | Ong, K.K., Pey, K.L., Lee, P.S., Wee, A.T.S., Wang, X.C., Tung, C.H., Tang, L.J., Chong, Y.F. (2006). Role of low temperature rapid thermal annealing in post-laser-annealed p-channel metal-oxide-semiconductor field effect transistor. Applied Physics Letters 89 (12) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2354446 | Abstract: | In this letter, the authors study the importance of a low temperature anneal in the removal of crystalline defects resulting from pulsed laser annealing of preamorphized ultrashallow p+/n junction. Using an additional low thermal budget rapid thermal annealing at 600 °C for 60 s, suppression of junction leakage current of two orders in a single-pulse laser annealing and one order in a ten-pulse laser annealing is achieved through a reduction of the residual crystalline defects that could not be annihilated by laser annealing, p-channel metal-oxide-semiconductor field effect transistors with good electrical characteristics can be obtained using pulsed laser annealing followed by a low thermal budget rapid thermal annealing. © 2006 American Institute of Physics. | Source Title: | Applied Physics Letters | URI: | http://scholarbank.nus.edu.sg/handle/10635/97835 | ISSN: | 00036951 | DOI: | 10.1063/1.2354446 |
Appears in Collections: | Staff Publications |
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