Role of low temperature rapid thermal annealing in post-laser-annealed p-channel metal-oxide-semiconductor field effect transistor

Abstract

In this letter, the authors study the importance of a low temperature anneal in the removal of crystalline defects resulting from pulsed laser annealing of preamorphized ultrashallow p+/n junction. Using an additional low thermal budget rapid thermal annealing at 600 °C for 60 s, suppression of junction leakage current of two orders in a single-pulse laser annealing and one order in a ten-pulse laser annealing is achieved through a reduction of the residual crystalline defects that could not be annihilated by laser annealing, p-channel metal-oxide-semiconductor field effect transistors with good electrical characteristics can be obtained using pulsed laser annealing followed by a low thermal budget rapid thermal annealing. © 2006 American Institute of Physics.