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|Title:||Role of low temperature rapid thermal annealing in post-laser-annealed p-channel metal-oxide-semiconductor field effect transistor|
|Citation:||Ong, K.K., Pey, K.L., Lee, P.S., Wee, A.T.S., Wang, X.C., Tung, C.H., Tang, L.J., Chong, Y.F. (2006). Role of low temperature rapid thermal annealing in post-laser-annealed p-channel metal-oxide-semiconductor field effect transistor. Applied Physics Letters 89 (12) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2354446|
|Abstract:||In this letter, the authors study the importance of a low temperature anneal in the removal of crystalline defects resulting from pulsed laser annealing of preamorphized ultrashallow p+/n junction. Using an additional low thermal budget rapid thermal annealing at 600 °C for 60 s, suppression of junction leakage current of two orders in a single-pulse laser annealing and one order in a ten-pulse laser annealing is achieved through a reduction of the residual crystalline defects that could not be annihilated by laser annealing, p-channel metal-oxide-semiconductor field effect transistors with good electrical characteristics can be obtained using pulsed laser annealing followed by a low thermal budget rapid thermal annealing. © 2006 American Institute of Physics.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
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