Depth resolution studies in SiGe delta-doped multilayers using ultralow-energy Cs+ secondary ion mass spectrometry

Please use this identifier to cite or link to this item: https://doi.org/10.1116/1.2429671

Title:	Depth resolution studies in SiGe delta-doped multilayers using ultralow-energy Cs+ secondary ion mass spectrometry
Authors:	Chanbasha, A.R. Wee, A.T.S.
Issue Date:	2007
Citation:	Chanbasha, A.R., Wee, A.T.S. (2007). Depth resolution studies in SiGe delta-doped multilayers using ultralow-energy Cs+ secondary ion mass spectrometry. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 25 (1) : 277-285. ScholarBank@NUS Repository. https://doi.org/10.1116/1.2429671
Abstract:	It is known that depth resolution can be improved by lowering the primary ion impact energy (Ep) and/or increasing the impact angle (θ) up to a critical θ, beyond which surface roughening ensues. However, lower Ep is accompanied by lower secondary ion yield, and for ultralow-energy Cs+ primary beam, a poorly focused beam. In this study, the authors subject a Ge delta-doped Si sample to ultralow-energy (
Source Title:	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
URI:	http://scholarbank.nus.edu.sg/handle/10635/96173
ISSN:	10711023
DOI:	10.1116/1.2429671
Appears in Collections:	Staff Publications

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