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Please use this identifier to cite or link to this item: https://doi.org/10.1116/1.2429671
DC FieldValue
dc.titleDepth resolution studies in SiGe delta-doped multilayers using ultralow-energy Cs+ secondary ion mass spectrometry
dc.contributor.authorChanbasha, A.R.
dc.contributor.authorWee, A.T.S.
dc.date.accessioned2014-10-16T09:20:23Z
dc.date.available2014-10-16T09:20:23Z
dc.date.issued2007
dc.identifier.citationChanbasha, A.R., Wee, A.T.S. (2007). Depth resolution studies in SiGe delta-doped multilayers using ultralow-energy Cs+ secondary ion mass spectrometry. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 25 (1) : 277-285. ScholarBank@NUS Repository. https://doi.org/10.1116/1.2429671
dc.identifier.issn10711023
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/96173
dc.description.abstractIt is known that depth resolution can be improved by lowering the primary ion impact energy (Ep) and/or increasing the impact angle (θ) up to a critical θ, beyond which surface roughening ensues. However, lower Ep is accompanied by lower secondary ion yield, and for ultralow-energy Cs+ primary beam, a poorly focused beam. In this study, the authors subject a Ge delta-doped Si sample to ultralow-energy (
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1116/1.2429671
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.doi10.1116/1.2429671
dc.description.sourcetitleJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
dc.description.volume25
dc.description.issue1
dc.description.page277-285
dc.description.codenJVTBD
dc.identifier.isiut000244512400051
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