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|Title:||Depth resolution studies in SiGe delta-doped multilayers using ultralow-energy Cs+ secondary ion mass spectrometry|
|Citation:||Chanbasha, A.R., Wee, A.T.S. (2007). Depth resolution studies in SiGe delta-doped multilayers using ultralow-energy Cs+ secondary ion mass spectrometry. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 25 (1) : 277-285. ScholarBank@NUS Repository. https://doi.org/10.1116/1.2429671|
|Abstract:||It is known that depth resolution can be improved by lowering the primary ion impact energy (Ep) and/or increasing the impact angle (θ) up to a critical θ, beyond which surface roughening ensues. However, lower Ep is accompanied by lower secondary ion yield, and for ultralow-energy Cs+ primary beam, a poorly focused beam. In this study, the authors subject a Ge delta-doped Si sample to ultralow-energy (|
|Source Title:||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|Appears in Collections:||Staff Publications|
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