Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.cap.2007.10.025
Title: Ni doped ZnO thin films for diluted magnetic semiconductor materials
Authors: Liu, E.
Xiao, P.
Chen, J.S. 
Lim, B.C.
Li, L.
Keywords: 75.50.Pp
75.50.Ss
75.70.-I
78.55.-m
Diluted magnetic semiconductor
Magnetron sputtering
Ni doped ZnO thin film
Issue Date: May-2008
Citation: Liu, E., Xiao, P., Chen, J.S., Lim, B.C., Li, L. (2008-05). Ni doped ZnO thin films for diluted magnetic semiconductor materials. Current Applied Physics 8 (3-4) : 408-411. ScholarBank@NUS Repository. https://doi.org/10.1016/j.cap.2007.10.025
Abstract: Ni doped ZnO (Zn1-xNixO) thin films were grown on quartz substrates via magnetron sputtering deposition process with the Ni concentrations of 5, 10 and 20 at.% in the films. The effects of Ni doping level and post annealing on the structural and magnetic properties of Zn1-xNixO films were investigated by means of X-ray diffraction (XRD), alternating gradient magnetometer (AGM) and photoluminescence (PL). A higher magnetic moment was acquired from the annealed Zn1-xNixO film doped with 5 at.% Ni, which was attributed to a better preferred orientation from a primary phase Ni2+:ZnO in the film. A relatively more pronounced ZnO(0 0 2) peak observed from the Zn1-xNixO film doped with 5 at.% Ni indicated a good crystallinity of the film, which was attributed to a lower level of Ni content in the film as well as the Ni2+ ions substituted for the Zn2+ ions to form Ni2+:ZnO. A slight shift in ZnO(0 0 2) peak position for the 5 and 10 at.% Ni doped ZnO films could be due to the distortion of the ZnO lattice caused by the Ni2+ ion substituents for the Zn2+ ions. © 2007 Elsevier B.V. All rights reserved.
Source Title: Current Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/86594
ISSN: 15671739
DOI: 10.1016/j.cap.2007.10.025
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