Please use this identifier to cite or link to this item:
https://doi.org/10.1016/j.cap.2007.10.025
DC Field | Value | |
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dc.title | Ni doped ZnO thin films for diluted magnetic semiconductor materials | |
dc.contributor.author | Liu, E. | |
dc.contributor.author | Xiao, P. | |
dc.contributor.author | Chen, J.S. | |
dc.contributor.author | Lim, B.C. | |
dc.contributor.author | Li, L. | |
dc.date.accessioned | 2014-10-07T09:52:32Z | |
dc.date.available | 2014-10-07T09:52:32Z | |
dc.date.issued | 2008-05 | |
dc.identifier.citation | Liu, E., Xiao, P., Chen, J.S., Lim, B.C., Li, L. (2008-05). Ni doped ZnO thin films for diluted magnetic semiconductor materials. Current Applied Physics 8 (3-4) : 408-411. ScholarBank@NUS Repository. https://doi.org/10.1016/j.cap.2007.10.025 | |
dc.identifier.issn | 15671739 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/86594 | |
dc.description.abstract | Ni doped ZnO (Zn1-xNixO) thin films were grown on quartz substrates via magnetron sputtering deposition process with the Ni concentrations of 5, 10 and 20 at.% in the films. The effects of Ni doping level and post annealing on the structural and magnetic properties of Zn1-xNixO films were investigated by means of X-ray diffraction (XRD), alternating gradient magnetometer (AGM) and photoluminescence (PL). A higher magnetic moment was acquired from the annealed Zn1-xNixO film doped with 5 at.% Ni, which was attributed to a better preferred orientation from a primary phase Ni2+:ZnO in the film. A relatively more pronounced ZnO(0 0 2) peak observed from the Zn1-xNixO film doped with 5 at.% Ni indicated a good crystallinity of the film, which was attributed to a lower level of Ni content in the film as well as the Ni2+ ions substituted for the Zn2+ ions to form Ni2+:ZnO. A slight shift in ZnO(0 0 2) peak position for the 5 and 10 at.% Ni doped ZnO films could be due to the distortion of the ZnO lattice caused by the Ni2+ ion substituents for the Zn2+ ions. © 2007 Elsevier B.V. All rights reserved. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/j.cap.2007.10.025 | |
dc.source | Scopus | |
dc.subject | 75.50.Pp | |
dc.subject | 75.50.Ss | |
dc.subject | 75.70.-I | |
dc.subject | 78.55.-m | |
dc.subject | Diluted magnetic semiconductor | |
dc.subject | Magnetron sputtering | |
dc.subject | Ni doped ZnO thin film | |
dc.type | Article | |
dc.contributor.department | MATERIALS SCIENCE AND ENGINEERING | |
dc.description.doi | 10.1016/j.cap.2007.10.025 | |
dc.description.sourcetitle | Current Applied Physics | |
dc.description.volume | 8 | |
dc.description.issue | 3-4 | |
dc.description.page | 408-411 | |
dc.identifier.isiut | 000253365000048 | |
Appears in Collections: | Staff Publications |
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