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|Title:||Novel nickel-alloy suicides for source/drain contact resistance reduction in N-channel multiple-gate transistors with sub-35nm gate length|
|Authors:||Lee, R.T.P. |
|Citation:||Lee, R.T.P.,Liow, T.-Y.,Tan, K.-M.,Lim, A.E.-J.,Wong, H.-S.,Lim, P.-C.,Lai, D.M.Y.,Lo, G.-Q.,Tung, C.-H.,Samudra, G.,Chi, D.-Z.,Yeo, Y.-C. (2006). Novel nickel-alloy suicides for source/drain contact resistance reduction in N-channel multiple-gate transistors with sub-35nm gate length. Technical Digest - International Electron Devices Meeting, IEDM : -. ScholarBank@NUS Repository. https://doi.org/10.1109/IEDM.2006.346915|
|Abstract:||In this work, we examined the Schottky-Barrier height modulation of NiSi by the incorporation of Aluminum (Al), Titanium (Ti), Erbium (Er), and Yterbium (Yb) in NiSi to form different NiSi-alloys. Among the NiSi-alloy candidates investigated, it was found that the NiAl-alloy suicide provides the most effective Schottky-Barrier height lowering (∼250 meV) on n-Si(001) substrates. Integration of NiAl-alloy suicides as the source and drain (S/D) suicide material for Multiple-Gate transistors (MuGFETs) was explored, and shown to deliver a drive current IDsat enhancement of 34% compared to MuGFETs employing NiSi S/D. We further showed that the novel NiAl-alloy silicidation process is compatible with lattice-mismatched silicon-carbon (SiC) S/D stressors. NiAl-alloy suicide is therefore a promising S/D suicide material for reducing the high parasitic series resistance in narrow fin MuGFETs for enhanced device performance.|
|Source Title:||Technical Digest - International Electron Devices Meeting, IEDM|
|Appears in Collections:||Staff Publications|
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