Please use this identifier to cite or link to this item: https://doi.org/10.1109/IEDM.2006.346915
Title: Novel nickel-alloy suicides for source/drain contact resistance reduction in N-channel multiple-gate transistors with sub-35nm gate length
Authors: Lee, R.T.P. 
Liow, T.-Y.
Tan, K.-M.
Lim, A.E.-J.
Wong, H.-S.
Lim, P.-C.
Lai, D.M.Y.
Lo, G.-Q.
Tung, C.-H.
Samudra, G. 
Chi, D.-Z.
Yeo, Y.-C. 
Issue Date: 2006
Source: Lee, R.T.P.,Liow, T.-Y.,Tan, K.-M.,Lim, A.E.-J.,Wong, H.-S.,Lim, P.-C.,Lai, D.M.Y.,Lo, G.-Q.,Tung, C.-H.,Samudra, G.,Chi, D.-Z.,Yeo, Y.-C. (2006). Novel nickel-alloy suicides for source/drain contact resistance reduction in N-channel multiple-gate transistors with sub-35nm gate length. Technical Digest - International Electron Devices Meeting, IEDM : -. ScholarBank@NUS Repository. https://doi.org/10.1109/IEDM.2006.346915
Abstract: In this work, we examined the Schottky-Barrier height modulation of NiSi by the incorporation of Aluminum (Al), Titanium (Ti), Erbium (Er), and Yterbium (Yb) in NiSi to form different NiSi-alloys. Among the NiSi-alloy candidates investigated, it was found that the NiAl-alloy suicide provides the most effective Schottky-Barrier height lowering (∼250 meV) on n-Si(001) substrates. Integration of NiAl-alloy suicides as the source and drain (S/D) suicide material for Multiple-Gate transistors (MuGFETs) was explored, and shown to deliver a drive current IDsat enhancement of 34% compared to MuGFETs employing NiSi S/D. We further showed that the novel NiAl-alloy silicidation process is compatible with lattice-mismatched silicon-carbon (SiC) S/D stressors. NiAl-alloy suicide is therefore a promising S/D suicide material for reducing the high parasitic series resistance in narrow fin MuGFETs for enhanced device performance.
Source Title: Technical Digest - International Electron Devices Meeting, IEDM
URI: http://scholarbank.nus.edu.sg/handle/10635/84020
ISBN: 1424404398
ISSN: 01631918
DOI: 10.1109/IEDM.2006.346915
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