Please use this identifier to cite or link to this item: https://doi.org/10.1109/ICSICT.2008.4734651
Title: Low temperature poly-germanium growth process on insulating substrate using palladium-induced lateral crystallization
Authors: Xie, R.
Chen, W.
Mingbin, Y.
Ann, O.S.
Tripathy, S.
Zhu, C. 
Issue Date: 2008
Citation: Xie, R.,Chen, W.,Mingbin, Y.,Ann, O.S.,Tripathy, S.,Zhu, C. (2008). Low temperature poly-germanium growth process on insulating substrate using palladium-induced lateral crystallization. International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT : 792-795. ScholarBank@NUS Repository. https://doi.org/10.1109/ICSICT.2008.4734651
Abstract: A thin palladium layer (∼20 Å) was selectively formed on top of amorphous germanium film before annealing and the effects of palladium layer on the lateral crystallization behavior of the amorphous germanium film were investigated through optical microscope, Raman spectroscopy, transmission electron microscopy, energy dispersion X-ray spectroscopy and selective area electron diffraction. Lateral crystallization of Ge with high growth rate was observed after annealing at 400°C in N2 ambient. High quality poly-crystallized Ge film was formed with little metal impurity. This lateral crystallization phenomenon might be useful for fabrication of 3D ICs as the channel materials for thin film transistors, as well as for integration of Ge photodetectors on top of Si ICs. © 2008 IEEE.
Source Title: International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT
URI: http://scholarbank.nus.edu.sg/handle/10635/83907
ISBN: 9781424421855
DOI: 10.1109/ICSICT.2008.4734651
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