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Please use this identifier to cite or link to this item: https://doi.org/10.1109/ICSICT.2008.4734651
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dc.titleLow temperature poly-germanium growth process on insulating substrate using palladium-induced lateral crystallization
dc.contributor.authorXie, R.
dc.contributor.authorChen, W.
dc.contributor.authorMingbin, Y.
dc.contributor.authorAnn, O.S.
dc.contributor.authorTripathy, S.
dc.contributor.authorZhu, C.
dc.date.accessioned2014-10-07T04:46:35Z
dc.date.available2014-10-07T04:46:35Z
dc.date.issued2008
dc.identifier.citationXie, R.,Chen, W.,Mingbin, Y.,Ann, O.S.,Tripathy, S.,Zhu, C. (2008). Low temperature poly-germanium growth process on insulating substrate using palladium-induced lateral crystallization. International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT : 792-795. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/ICSICT.2008.4734651" target="_blank">https://doi.org/10.1109/ICSICT.2008.4734651</a>
dc.identifier.isbn9781424421855
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83907
dc.description.abstractA thin palladium layer (∼20 Å) was selectively formed on top of amorphous germanium film before annealing and the effects of palladium layer on the lateral crystallization behavior of the amorphous germanium film were investigated through optical microscope, Raman spectroscopy, transmission electron microscopy, energy dispersion X-ray spectroscopy and selective area electron diffraction. Lateral crystallization of Ge with high growth rate was observed after annealing at 400°C in N2 ambient. High quality poly-crystallized Ge film was formed with little metal impurity. This lateral crystallization phenomenon might be useful for fabrication of 3D ICs as the channel materials for thin film transistors, as well as for integration of Ge photodetectors on top of Si ICs. © 2008 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/ICSICT.2008.4734651
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/ICSICT.2008.4734651
dc.description.sourcetitleInternational Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT
dc.description.page792-795
dc.identifier.isiutNOT_IN_WOS
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