Please use this identifier to cite or link to this item: https://doi.org/10.1149/1.3572300
Title: High-k integration and interface engineering for III-V MOSFETs
Authors: Oh, H.J. 
Sumarlina, A.B.S.
Lee, S.J. 
Issue Date: 2011
Source: Oh, H.J., Sumarlina, A.B.S., Lee, S.J. (2011). High-k integration and interface engineering for III-V MOSFETs. ECS Transactions 35 (4) : 481-495. ScholarBank@NUS Repository. https://doi.org/10.1149/1.3572300
Abstract: In this work, we report the comprehensive study of performance enhancement of InGaAs n-MOSFET by plasma PH3 passivation. The calibrated plasma PH3 passivation of the InGaAs surface before CVD high-k dielectric deposition significantly improves interface quality, resulting in suppressed frequency dispersion in C-V, increase in drive-current with high electron mobility, and excellent thermal stability. ©The Electrochemical Society.
Source Title: ECS Transactions
URI: http://scholarbank.nus.edu.sg/handle/10635/83798
ISBN: 9781566778657
ISSN: 19385862
DOI: 10.1149/1.3572300
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