Please use this identifier to cite or link to this item:
https://doi.org/10.1149/1.3572300
| Title: | High-k integration and interface engineering for III-V MOSFETs | Authors: | Oh, H.J. Sumarlina, A.B.S. Lee, S.J. |
Issue Date: | 2011 | Citation: | Oh, H.J., Sumarlina, A.B.S., Lee, S.J. (2011). High-k integration and interface engineering for III-V MOSFETs. ECS Transactions 35 (4) : 481-495. ScholarBank@NUS Repository. https://doi.org/10.1149/1.3572300 | Abstract: | In this work, we report the comprehensive study of performance enhancement of InGaAs n-MOSFET by plasma PH3 passivation. The calibrated plasma PH3 passivation of the InGaAs surface before CVD high-k dielectric deposition significantly improves interface quality, resulting in suppressed frequency dispersion in C-V, increase in drive-current with high electron mobility, and excellent thermal stability. ©The Electrochemical Society. | Source Title: | ECS Transactions | URI: | http://scholarbank.nus.edu.sg/handle/10635/83798 | ISBN: | 9781566778657 | ISSN: | 19385862 | DOI: | 10.1149/1.3572300 |
| Appears in Collections: | Staff Publications |
Show full item record
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.