High temperature stable [Ir3Si-TaN]/HfLaON CMOS with large work-function difference

Please use this identifier to cite or link to this item: https://doi.org/10.1109/IEDM.2006.346859

Title:	High temperature stable [Ir3Si-TaN]/HfLaON CMOS with large work-function difference
Authors:	Wu, C.H. Hung, B.F. Chin, A. Wang, S.J. Chen, W.J. Wang, X.P. Li, M.-F. Zhu, C. Jin, Y. Tao, H.J. Chen, S.C. Liang, M.S.
Issue Date:	2006
Citation:	Wu, C.H.,Hung, B.F.,Chin, A.,Wang, S.J.,Chen, W.J.,Wang, X.P.,Li, M.-F.,Zhu, C.,Jin, Y.,Tao, H.J.,Chen, S.C.,Liang, M.S. (2006). High temperature stable [Ir3Si-TaN]/HfLaON CMOS with large work-function difference. Technical Digest - International Electron Devices Meeting, IEDM : -. ScholarBank@NUS Repository. https://doi.org/10.1109/IEDM.2006.346859
Abstract:	We report novel 1000°C-stable [Ir3Si-TaN]/HfLaON CMOS for the first time, where the self-aligned and gate-first process are full compatible to current VLSI. Good Φm-eff of 5.08 and 4.24 eV, low Vt of -0.10 and 0.18 V, high mobility of 84 and 217 cm2/Vs at 1.6 nm EOT, and small 85°C BTI
Source Title:	Technical Digest - International Electron Devices Meeting, IEDM
URI:	http://scholarbank.nus.edu.sg/handle/10635/83795
ISBN:	1424404398
ISSN:	01631918
DOI:	10.1109/IEDM.2006.346859
Appears in Collections:	Staff Publications

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