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Please use this identifier to cite or link to this item: https://doi.org/10.1109/IEDM.2006.346859
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dc.titleHigh temperature stable [Ir3Si-TaN]/HfLaON CMOS with large work-function difference
dc.contributor.authorWu, C.H.
dc.contributor.authorHung, B.F.
dc.contributor.authorChin, A.
dc.contributor.authorWang, S.J.
dc.contributor.authorChen, W.J.
dc.contributor.authorWang, X.P.
dc.contributor.authorLi, M.-F.
dc.contributor.authorZhu, C.
dc.contributor.authorJin, Y.
dc.contributor.authorTao, H.J.
dc.contributor.authorChen, S.C.
dc.contributor.authorLiang, M.S.
dc.date.accessioned2014-10-07T04:45:17Z
dc.date.available2014-10-07T04:45:17Z
dc.date.issued2006
dc.identifier.citationWu, C.H.,Hung, B.F.,Chin, A.,Wang, S.J.,Chen, W.J.,Wang, X.P.,Li, M.-F.,Zhu, C.,Jin, Y.,Tao, H.J.,Chen, S.C.,Liang, M.S. (2006). High temperature stable [Ir3Si-TaN]/HfLaON CMOS with large work-function difference. Technical Digest - International Electron Devices Meeting, IEDM : -. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/IEDM.2006.346859" target="_blank">https://doi.org/10.1109/IEDM.2006.346859</a>
dc.identifier.isbn1424404398
dc.identifier.issn01631918
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83795
dc.description.abstractWe report novel 1000°C-stable [Ir3Si-TaN]/HfLaON CMOS for the first time, where the self-aligned and gate-first process are full compatible to current VLSI. Good Φm-eff of 5.08 and 4.24 eV, low Vt of -0.10 and 0.18 V, high mobility of 84 and 217 cm2/Vs at 1.6 nm EOT, and small 85°C BTI
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/IEDM.2006.346859
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/IEDM.2006.346859
dc.description.sourcetitleTechnical Digest - International Electron Devices Meeting, IEDM
dc.description.page-
dc.description.codenTDIMD
dc.identifier.isiutNOT_IN_WOS
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