Please use this identifier to cite or link to this item: https://doi.org/10.1109/IEDM.2007.4419049
Title: High performance pMOSFETs using Si/Si1-xGex/Si quantum wells with high-k/ metal gate stacks and additive uniaxial strain for 22 nm technology node
Authors: Suthram, S.
Majhi, P.
Sun, G.
Kalra, P.
Harris, H.R.
Choi, K.J.
Heh, D.
Oh, J.
Kelly, D.
Choi, R.
Cho, B.J. 
Hussain, M.M.
Smith, C.
Banerjee, S.
Tsai, W.
Thompson, S.E.
Tseng, H.H.
Jammy, R.
Issue Date: 2007
Source: Suthram, S., Majhi, P., Sun, G., Kalra, P., Harris, H.R., Choi, K.J., Heh, D., Oh, J., Kelly, D., Choi, R., Cho, B.J., Hussain, M.M., Smith, C., Banerjee, S., Tsai, W., Thompson, S.E., Tseng, H.H., Jammy, R. (2007). High performance pMOSFETs using Si/Si1-xGex/Si quantum wells with high-k/ metal gate stacks and additive uniaxial strain for 22 nm technology node. Technical Digest - International Electron Devices Meeting, IEDM : 727-730. ScholarBank@NUS Repository. https://doi.org/10.1109/IEDM.2007.4419049
Abstract: We demonstrate for the first time that both SiGe and Ge channel with high-k/metal gate stack pMOSFETs show similar uniaxial stress enhanced drive current as Si which is expected from k.p calculations. We also demonstrate experimentally that pMOSFETs with strained quantum wells (QW) in the Si-Ge system exhibited high performance and low off-state leakage comparable to optimized gate stacks on Si. These results significantly hasten the feasibility of realizing SiGe or Ge channel pMOSFETs for 22 nm and beyond. © 2007 IEEE.
Source Title: Technical Digest - International Electron Devices Meeting, IEDM
URI: http://scholarbank.nus.edu.sg/handle/10635/83787
ISSN: 01631918
DOI: 10.1109/IEDM.2007.4419049
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

15
checked on Mar 27, 2018

WEB OF SCIENCETM
Citations

21
checked on Mar 27, 2018

Page view(s)

25
checked on Mar 11, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.