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Please use this identifier to cite or link to this item: https://doi.org/10.1109/IEDM.2007.4419049
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dc.titleHigh performance pMOSFETs using Si/Si1-xGex/Si quantum wells with high-k/ metal gate stacks and additive uniaxial strain for 22 nm technology node
dc.contributor.authorSuthram, S.
dc.contributor.authorMajhi, P.
dc.contributor.authorSun, G.
dc.contributor.authorKalra, P.
dc.contributor.authorHarris, H.R.
dc.contributor.authorChoi, K.J.
dc.contributor.authorHeh, D.
dc.contributor.authorOh, J.
dc.contributor.authorKelly, D.
dc.contributor.authorChoi, R.
dc.contributor.authorCho, B.J.
dc.contributor.authorHussain, M.M.
dc.contributor.authorSmith, C.
dc.contributor.authorBanerjee, S.
dc.contributor.authorTsai, W.
dc.contributor.authorThompson, S.E.
dc.contributor.authorTseng, H.H.
dc.contributor.authorJammy, R.
dc.date.accessioned2014-10-07T04:45:11Z
dc.date.available2014-10-07T04:45:11Z
dc.date.issued2007
dc.identifier.citationSuthram, S., Majhi, P., Sun, G., Kalra, P., Harris, H.R., Choi, K.J., Heh, D., Oh, J., Kelly, D., Choi, R., Cho, B.J., Hussain, M.M., Smith, C., Banerjee, S., Tsai, W., Thompson, S.E., Tseng, H.H., Jammy, R. (2007). High performance pMOSFETs using Si/Si1-xGex/Si quantum wells with high-k/ metal gate stacks and additive uniaxial strain for 22 nm technology node. Technical Digest - International Electron Devices Meeting, IEDM : 727-730. ScholarBank@NUS Repository. https://doi.org/10.1109/IEDM.2007.4419049
dc.identifier.issn01631918
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83787
dc.description.abstractWe demonstrate for the first time that both SiGe and Ge channel with high-k/metal gate stack pMOSFETs show similar uniaxial stress enhanced drive current as Si which is expected from k.p calculations. We also demonstrate experimentally that pMOSFETs with strained quantum wells (QW) in the Si-Ge system exhibited high performance and low off-state leakage comparable to optimized gate stacks on Si. These results significantly hasten the feasibility of realizing SiGe or Ge channel pMOSFETs for 22 nm and beyond. © 2007 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/IEDM.2007.4419049
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/IEDM.2007.4419049
dc.description.sourcetitleTechnical Digest - International Electron Devices Meeting, IEDM
dc.description.page727-730
dc.description.codenTDIMD
dc.identifier.isiut000259347800166
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