Enhanced carrier transport in strained bulk N-MOSFETs with silicon-carbon source/drain stressors

Please use this identifier to cite or link to this item: https://doi.org/10.1109/VTSA.2007.378954

Title:	Enhanced carrier transport in strained bulk N-MOSFETs with silicon-carbon source/drain stressors
Authors:	Ang, K.-W. Chui, K.-J. Tung, C.-H. Samudra, G. Balasubramanian, N. Yeo, Y.-C.
Issue Date:	2007
Citation:	Ang, K.-W.,Chui, K.-J.,Tung, C.-H.,Samudra, G.,Balasubramanian, N.,Yeo, Y.-C. (2007). Enhanced carrier transport in strained bulk N-MOSFETs with silicon-carbon source/drain stressors. International Symposium on VLSI Technology, Systems, and Applications, Proceedings : -. ScholarBank@NUS Repository. https://doi.org/10.1109/VTSA.2007.378954
Abstract:	We report the demonstration of strained n-channel transistor with silicon-carbon (Si1-yCy) source/drain (S/D) stressors for enhanced drive current Ion performance. At a fixed DIBL of 0.15 V/V, n-FETs with Si1-yCy S/D demonstrate a significant I on improvement of 30% over the unstrained control n-FETs. This improvement is attributed to the carrier mobility gain as a result of the lateral tensile strain and vertical compressive strain in the transistor channel. © 2007 IEEE.
Source Title:	International Symposium on VLSI Technology, Systems, and Applications, Proceedings
URI:	http://scholarbank.nus.edu.sg/handle/10635/83698
ISBN:	1424405858
DOI:	10.1109/VTSA.2007.378954
Appears in Collections:	Staff Publications

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