Please use this identifier to cite or link to this item: https://doi.org/10.1109/VTSA.2007.378954
Title: Enhanced carrier transport in strained bulk N-MOSFETs with silicon-carbon source/drain stressors
Authors: Ang, K.-W.
Chui, K.-J.
Tung, C.-H.
Samudra, G. 
Balasubramanian, N.
Yeo, Y.-C. 
Issue Date: 2007
Citation: Ang, K.-W.,Chui, K.-J.,Tung, C.-H.,Samudra, G.,Balasubramanian, N.,Yeo, Y.-C. (2007). Enhanced carrier transport in strained bulk N-MOSFETs with silicon-carbon source/drain stressors. International Symposium on VLSI Technology, Systems, and Applications, Proceedings : -. ScholarBank@NUS Repository. https://doi.org/10.1109/VTSA.2007.378954
Abstract: We report the demonstration of strained n-channel transistor with silicon-carbon (Si1-yCy) source/drain (S/D) stressors for enhanced drive current Ion performance. At a fixed DIBL of 0.15 V/V, n-FETs with Si1-yCy S/D demonstrate a significant I on improvement of 30% over the unstrained control n-FETs. This improvement is attributed to the carrier mobility gain as a result of the lateral tensile strain and vertical compressive strain in the transistor channel. © 2007 IEEE.
Source Title: International Symposium on VLSI Technology, Systems, and Applications, Proceedings
URI: http://scholarbank.nus.edu.sg/handle/10635/83698
ISBN: 1424405858
DOI: 10.1109/VTSA.2007.378954
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