Bias temperature instability (BTI) characteristics of graphene Field-Effect Transistors

Please use this identifier to cite or link to this item: https://doi.org/10.1109/VTSA.2011.5872215

Title:	Bias temperature instability (BTI) characteristics of graphene Field-Effect Transistors
Authors:	Liu, B. Yang, M. Zhan, C. Yang, Y. Yeo, Y.-C.
Issue Date:	2011
Citation:	Liu, B.,Yang, M.,Zhan, C.,Yang, Y.,Yeo, Y.-C. (2011). Bias temperature instability (BTI) characteristics of graphene Field-Effect Transistors. International Symposium on VLSI Technology, Systems, and Applications, Proceedings : 22-23. ScholarBank@NUS Repository. https://doi.org/10.1109/VTSA.2011.5872215
Abstract:	We report a bias temperature instability (BTI) study of graphene Field-Effect Transistor (G-FET) for the first time. New BTI characteristics are observed for G-FETs fabricated using a graphene transfer-free process. Temperature significantly affects BTI of G-FETs by changing the direction of shift of IDS. A plausible graphene BTI mechanism is discussed. © 2011 IEEE.
Source Title:	International Symposium on VLSI Technology, Systems, and Applications, Proceedings
URI:	http://scholarbank.nus.edu.sg/handle/10635/83512
ISBN:	9781424484928
DOI:	10.1109/VTSA.2011.5872215
Appears in Collections:	Staff Publications

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