Please use this identifier to cite or link to this item:
https://doi.org/10.1109/VTSA.2011.5872215
DC Field | Value | |
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dc.title | Bias temperature instability (BTI) characteristics of graphene Field-Effect Transistors | |
dc.contributor.author | Liu, B. | |
dc.contributor.author | Yang, M. | |
dc.contributor.author | Zhan, C. | |
dc.contributor.author | Yang, Y. | |
dc.contributor.author | Yeo, Y.-C. | |
dc.date.accessioned | 2014-10-07T04:42:04Z | |
dc.date.available | 2014-10-07T04:42:04Z | |
dc.date.issued | 2011 | |
dc.identifier.citation | Liu, B.,Yang, M.,Zhan, C.,Yang, Y.,Yeo, Y.-C. (2011). Bias temperature instability (BTI) characteristics of graphene Field-Effect Transistors. International Symposium on VLSI Technology, Systems, and Applications, Proceedings : 22-23. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/VTSA.2011.5872215" target="_blank">https://doi.org/10.1109/VTSA.2011.5872215</a> | |
dc.identifier.isbn | 9781424484928 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/83512 | |
dc.description.abstract | We report a bias temperature instability (BTI) study of graphene Field-Effect Transistor (G-FET) for the first time. New BTI characteristics are observed for G-FETs fabricated using a graphene transfer-free process. Temperature significantly affects BTI of G-FETs by changing the direction of shift of IDS. A plausible graphene BTI mechanism is discussed. © 2011 IEEE. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/VTSA.2011.5872215 | |
dc.source | Scopus | |
dc.type | Conference Paper | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.doi | 10.1109/VTSA.2011.5872215 | |
dc.description.sourcetitle | International Symposium on VLSI Technology, Systems, and Applications, Proceedings | |
dc.description.page | 22-23 | |
dc.identifier.isiut | NOT_IN_WOS | |
Appears in Collections: | Staff Publications |
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