Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2008.920755
Title: P-channel tri-gate FinFETs featuring Ni1-yPtySiGe source/drain contacts for enhanced drive current performance
Authors: Lee, R.T.-P. 
Tan, K.-M.
Lim, A.E.-J.
Liow, T.-Y.
Samudra, G.S. 
Chi, D.-Z.
Yeo, Y.-C. 
Keywords: FinFET
Nickel platinum
Nickel silicide
Resistance
Schottky barriers
Issue Date: May-2008
Citation: Lee, R.T.-P., Tan, K.-M., Lim, A.E.-J., Liow, T.-Y., Samudra, G.S., Chi, D.-Z., Yeo, Y.-C. (2008-05). P-channel tri-gate FinFETs featuring Ni1-yPtySiGe source/drain contacts for enhanced drive current performance. IEEE Electron Device Letters 29 (5) : 438-441. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2008.920755
Abstract: We report the integration of nickel platinum germanosilicide (Ni1-yPtySiGe) contacts in tri-gate FinFETs with silicon germanium source/drain stressors for enhanced drive current performance. The structural and electrical properties of Ni1-yPtySiGe contacts with platinum (Pt) concentrations up to 20 atomic % (at. %) were explored for FinFET integration. Our results show that Ni1-y PtySiGe incorporated with 10 at. % Pt shows superior morphological stability, a suitably low sheet resistivity and the lowest Schottky hole barrier height (φB P) among the Ni1-yPtySiGe candidates evaluated. The low φB P (0.309 eV) provides a 15% reduction in series resistance Rseries. With a superior morphological stability and reduced Rseries, FinFETs integrated with Ni0.90Pt0.10SiGe contacts exhibit an overall 18% improvement in drive current compared to FinFETs with NiSiGe contacts. © 2008 IEEE.
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/82868
ISSN: 07413106
DOI: 10.1109/LED.2008.920755
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