Please use this identifier to cite or link to this item:
https://doi.org/10.1109/LED.2008.920755
DC Field | Value | |
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dc.title | P-channel tri-gate FinFETs featuring Ni1-yPtySiGe source/drain contacts for enhanced drive current performance | |
dc.contributor.author | Lee, R.T.-P. | |
dc.contributor.author | Tan, K.-M. | |
dc.contributor.author | Lim, A.E.-J. | |
dc.contributor.author | Liow, T.-Y. | |
dc.contributor.author | Samudra, G.S. | |
dc.contributor.author | Chi, D.-Z. | |
dc.contributor.author | Yeo, Y.-C. | |
dc.date.accessioned | 2014-10-07T04:34:27Z | |
dc.date.available | 2014-10-07T04:34:27Z | |
dc.date.issued | 2008-05 | |
dc.identifier.citation | Lee, R.T.-P., Tan, K.-M., Lim, A.E.-J., Liow, T.-Y., Samudra, G.S., Chi, D.-Z., Yeo, Y.-C. (2008-05). P-channel tri-gate FinFETs featuring Ni1-yPtySiGe source/drain contacts for enhanced drive current performance. IEEE Electron Device Letters 29 (5) : 438-441. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2008.920755 | |
dc.identifier.issn | 07413106 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/82868 | |
dc.description.abstract | We report the integration of nickel platinum germanosilicide (Ni1-yPtySiGe) contacts in tri-gate FinFETs with silicon germanium source/drain stressors for enhanced drive current performance. The structural and electrical properties of Ni1-yPtySiGe contacts with platinum (Pt) concentrations up to 20 atomic % (at. %) were explored for FinFET integration. Our results show that Ni1-y PtySiGe incorporated with 10 at. % Pt shows superior morphological stability, a suitably low sheet resistivity and the lowest Schottky hole barrier height (φB P) among the Ni1-yPtySiGe candidates evaluated. The low φB P (0.309 eV) provides a 15% reduction in series resistance Rseries. With a superior morphological stability and reduced Rseries, FinFETs integrated with Ni0.90Pt0.10SiGe contacts exhibit an overall 18% improvement in drive current compared to FinFETs with NiSiGe contacts. © 2008 IEEE. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/LED.2008.920755 | |
dc.source | Scopus | |
dc.subject | FinFET | |
dc.subject | Nickel platinum | |
dc.subject | Nickel silicide | |
dc.subject | Resistance | |
dc.subject | Schottky barriers | |
dc.type | Article | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.doi | 10.1109/LED.2008.920755 | |
dc.description.sourcetitle | IEEE Electron Device Letters | |
dc.description.volume | 29 | |
dc.description.issue | 5 | |
dc.description.page | 438-441 | |
dc.description.coden | EDLED | |
dc.identifier.isiut | 000255317400007 | |
Appears in Collections: | Staff Publications |
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