Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2008.2000716
Title: Novel nickel silicide contact technology using selenium segregation for SOI N-FETs with silicon-carbon source/drain stressors
Authors: Wong, H.-S.
Liu, F.-Y.
Ang, K.-W.
Samudra, G.
Yeo, Y.-C. 
Keywords: Ohmic contact
Schottky barrier height
Selenium (Se) segregation
Silicon-carbon source/drain (S/D) stressor
Issue Date: Aug-2008
Citation: Wong, H.-S., Liu, F.-Y., Ang, K.-W., Samudra, G., Yeo, Y.-C. (2008-08). Novel nickel silicide contact technology using selenium segregation for SOI N-FETs with silicon-carbon source/drain stressors. IEEE Electron Device Letters 29 (8) : 841-844. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2008.2000716
Abstract: We explore a novel silicide contact technology for effective Schottky barrier height ΦBn and contact resistance reduction, which is compatible with an advanced silicon-carbon (Si1 -xCx) source/drain (S/D) stressor technology. The new silicide contact technology incorporates selenium (Se) that is coimplanted with S/D dopants into the silicon-carbon S/D prior to nickel silicidation, leading to the segregation of Se at the NiSi:C/n-Si0.99C0.01 interface and the achievement of excellent ohmic contact characteristics. We demonstrate that the Se-coimplantation process contributes to a 23% drive current enhancement in a strained silicon-on-insulator n-MOSFET. The enhancement is attributed to the decrease of external series resistance which is primarily due to the reduction of silicide contact resistance. © 2008 IEEE.
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/82786
ISSN: 07413106
DOI: 10.1109/LED.2008.2000716
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