Please use this identifier to cite or link to this item:
https://doi.org/10.1109/LED.2008.2000716
DC Field | Value | |
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dc.title | Novel nickel silicide contact technology using selenium segregation for SOI N-FETs with silicon-carbon source/drain stressors | |
dc.contributor.author | Wong, H.-S. | |
dc.contributor.author | Liu, F.-Y. | |
dc.contributor.author | Ang, K.-W. | |
dc.contributor.author | Samudra, G. | |
dc.contributor.author | Yeo, Y.-C. | |
dc.date.accessioned | 2014-10-07T04:33:29Z | |
dc.date.available | 2014-10-07T04:33:29Z | |
dc.date.issued | 2008-08 | |
dc.identifier.citation | Wong, H.-S., Liu, F.-Y., Ang, K.-W., Samudra, G., Yeo, Y.-C. (2008-08). Novel nickel silicide contact technology using selenium segregation for SOI N-FETs with silicon-carbon source/drain stressors. IEEE Electron Device Letters 29 (8) : 841-844. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2008.2000716 | |
dc.identifier.issn | 07413106 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/82786 | |
dc.description.abstract | We explore a novel silicide contact technology for effective Schottky barrier height ΦBn and contact resistance reduction, which is compatible with an advanced silicon-carbon (Si1 -xCx) source/drain (S/D) stressor technology. The new silicide contact technology incorporates selenium (Se) that is coimplanted with S/D dopants into the silicon-carbon S/D prior to nickel silicidation, leading to the segregation of Se at the NiSi:C/n-Si0.99C0.01 interface and the achievement of excellent ohmic contact characteristics. We demonstrate that the Se-coimplantation process contributes to a 23% drive current enhancement in a strained silicon-on-insulator n-MOSFET. The enhancement is attributed to the decrease of external series resistance which is primarily due to the reduction of silicide contact resistance. © 2008 IEEE. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/LED.2008.2000716 | |
dc.source | Scopus | |
dc.subject | Ohmic contact | |
dc.subject | Schottky barrier height | |
dc.subject | Selenium (Se) segregation | |
dc.subject | Silicon-carbon source/drain (S/D) stressor | |
dc.type | Article | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.doi | 10.1109/LED.2008.2000716 | |
dc.description.sourcetitle | IEEE Electron Device Letters | |
dc.description.volume | 29 | |
dc.description.issue | 8 | |
dc.description.page | 841-844 | |
dc.description.coden | EDLED | |
dc.identifier.isiut | 000258096000007 | |
Appears in Collections: | Staff Publications |
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