A high-yield HfOx-based unipolar resistive ram employing Ni electrode compatible with Si-diode selector for crossbar integration

Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2010.2099205

Title:	A high-yield HfOx-based unipolar resistive ram employing Ni electrode compatible with Si-diode selector for crossbar integration
Authors:	Tran, X.A. Yu, H.Y. Yeo, Y.C. Wu, L. Liu, W.J. Wang, Z.R. Fang, Z. Pey, K.L. Sun, X.W. Du, A.Y. Nguyen, B.Y. Li, M.F.
Keywords:	HfOx resistive random access memory (RRAM) unipolar resistive switching (RS)
Issue Date:	Mar-2011
Citation:	Tran, X.A., Yu, H.Y., Yeo, Y.C., Wu, L., Liu, W.J., Wang, Z.R., Fang, Z., Pey, K.L., Sun, X.W., Du, A.Y., Nguyen, B.Y., Li, M.F. (2011-03). A high-yield HfOx-based unipolar resistive ram employing Ni electrode compatible with Si-diode selector for crossbar integration. IEEE Electron Device Letters 32 (3) : 396-398. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2010.2099205
Abstract:	In this letter, a resistive random access memory based on Ni electrodeHfOx dielectricn+ Si substrate structure is demonstrated, which can be integrated with Si diode as selector for application in crossbar architecture. The unipolar device shows well-behaved memory performance, such as high on/off resistance ratio 10-3, good retention characteristics 10-5s at 150°C), satisfactory pulse switching endurance (10-5), and a fast programming speed of about 50 ns. More importantly, it also exhibits almost 100% device yield on a 6-in wafer. © 2006 IEEE.
Source Title:	IEEE Electron Device Letters
URI:	http://scholarbank.nus.edu.sg/handle/10635/81875
ISSN:	07413106
DOI:	10.1109/LED.2010.2099205
Appears in Collections:	Staff Publications

There are no files associated with this item.

Check