Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2010.2099205
Title: A high-yield HfOx-based unipolar resistive ram employing Ni electrode compatible with Si-diode selector for crossbar integration
Authors: Tran, X.A.
Yu, H.Y.
Yeo, Y.C. 
Wu, L.
Liu, W.J.
Wang, Z.R.
Fang, Z.
Pey, K.L.
Sun, X.W.
Du, A.Y.
Nguyen, B.Y.
Li, M.F.
Keywords: HfOx
resistive random access memory (RRAM)
unipolar resistive switching (RS)
Issue Date: Mar-2011
Citation: Tran, X.A., Yu, H.Y., Yeo, Y.C., Wu, L., Liu, W.J., Wang, Z.R., Fang, Z., Pey, K.L., Sun, X.W., Du, A.Y., Nguyen, B.Y., Li, M.F. (2011-03). A high-yield HfOx-based unipolar resistive ram employing Ni electrode compatible with Si-diode selector for crossbar integration. IEEE Electron Device Letters 32 (3) : 396-398. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2010.2099205
Abstract: In this letter, a resistive random access memory based on Ni electrodeHfOx dielectricn+ Si substrate structure is demonstrated, which can be integrated with Si diode as selector for application in crossbar architecture. The unipolar device shows well-behaved memory performance, such as high on/off resistance ratio 10-3, good retention characteristics 10-5s at 150°C), satisfactory pulse switching endurance (10-5), and a fast programming speed of about 50 ns. More importantly, it also exhibits almost 100% device yield on a 6-in wafer. © 2006 IEEE.
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/81875
ISSN: 07413106
DOI: 10.1109/LED.2010.2099205
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