A high-yield HfOx-based unipolar resistive ram employing Ni electrode compatible with Si-diode selector for crossbar integration

Abstract

In this letter, a resistive random access memory based on Ni electrodeHfOx dielectricn+ Si substrate structure is demonstrated, which can be integrated with Si diode as selector for application in crossbar architecture. The unipolar device shows well-behaved memory performance, such as high on/off resistance ratio 10-3, good retention characteristics 10-5s at 150°C), satisfactory pulse switching endurance (10-5), and a fast programming speed of about 50 ns. More importantly, it also exhibits almost 100% device yield on a 6-in wafer. © 2006 IEEE.