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Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2010.2099205
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dc.titleA high-yield HfOx-based unipolar resistive ram employing Ni electrode compatible with Si-diode selector for crossbar integration
dc.contributor.authorTran, X.A.
dc.contributor.authorYu, H.Y.
dc.contributor.authorYeo, Y.C.
dc.contributor.authorWu, L.
dc.contributor.authorLiu, W.J.
dc.contributor.authorWang, Z.R.
dc.contributor.authorFang, Z.
dc.contributor.authorPey, K.L.
dc.contributor.authorSun, X.W.
dc.contributor.authorDu, A.Y.
dc.contributor.authorNguyen, B.Y.
dc.contributor.authorLi, M.F.
dc.date.accessioned2014-10-07T04:22:44Z
dc.date.available2014-10-07T04:22:44Z
dc.date.issued2011-03
dc.identifier.citationTran, X.A., Yu, H.Y., Yeo, Y.C., Wu, L., Liu, W.J., Wang, Z.R., Fang, Z., Pey, K.L., Sun, X.W., Du, A.Y., Nguyen, B.Y., Li, M.F. (2011-03). A high-yield HfOx-based unipolar resistive ram employing Ni electrode compatible with Si-diode selector for crossbar integration. IEEE Electron Device Letters 32 (3) : 396-398. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2010.2099205
dc.identifier.issn07413106
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/81875
dc.description.abstractIn this letter, a resistive random access memory based on Ni electrodeHfOx dielectricn+ Si substrate structure is demonstrated, which can be integrated with Si diode as selector for application in crossbar architecture. The unipolar device shows well-behaved memory performance, such as high on/off resistance ratio 10-3, good retention characteristics 10-5s at 150°C), satisfactory pulse switching endurance (10-5), and a fast programming speed of about 50 ns. More importantly, it also exhibits almost 100% device yield on a 6-in wafer. © 2006 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/LED.2010.2099205
dc.sourceScopus
dc.subjectHfOx
dc.subjectresistive random access memory (RRAM)
dc.subjectunipolar resistive switching (RS)
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/LED.2010.2099205
dc.description.sourcetitleIEEE Electron Device Letters
dc.description.volume32
dc.description.issue3
dc.description.page396-398
dc.description.codenEDLED
dc.identifier.isiut000287658400058
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