Critical crystal growth of graphene on dielectric substrates at low temperature for electronic devices

Please use this identifier to cite or link to this item: https://doi.org/10.1002/anie.201306086

Title:	Critical crystal growth of graphene on dielectric substrates at low temperature for electronic devices
Authors:	Wei, D. Lu, Y. Han, C. Niu, T. Chen, W. Wee, A.T.S.
Keywords:	chemical vapor deposition crystal growth graphene nanomaterials scanning probe microscopy
Issue Date:	23-Dec-2013
Citation:	Wei, D., Lu, Y., Han, C., Niu, T., Chen, W., Wee, A.T.S. (2013-12-23). Critical crystal growth of graphene on dielectric substrates at low temperature for electronic devices. Angewandte Chemie - International Edition 52 (52) : 14121-14126. ScholarBank@NUS Repository. https://doi.org/10.1002/anie.201306086
Abstract:	Born at its final resting place: Moderate etching by a hydrogen plasma during plasma-enhanced chemical vapor deposition led to a critical equilibrium state of graphene edge growth in which graphene hexagonal single crystals or continuous graphene films were produced directly on dielectric substrates at 400 °C without a catalyst (see picture). The direct use of the resulting high-quality graphene in devices avoids troublesome transfer processes. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Source Title:	Angewandte Chemie - International Edition
URI:	http://scholarbank.nus.edu.sg/handle/10635/75835
ISSN:	14337851
DOI:	10.1002/anie.201306086
Appears in Collections:	Staff Publications

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