Please use this identifier to cite or link to this item: https://doi.org/10.1002/anie.201306086
Title: Critical crystal growth of graphene on dielectric substrates at low temperature for electronic devices
Authors: Wei, D. 
Lu, Y. 
Han, C.
Niu, T.
Chen, W. 
Wee, A.T.S. 
Keywords: chemical vapor deposition
crystal growth
graphene
nanomaterials
scanning probe microscopy
Issue Date: 23-Dec-2013
Source: Wei, D., Lu, Y., Han, C., Niu, T., Chen, W., Wee, A.T.S. (2013-12-23). Critical crystal growth of graphene on dielectric substrates at low temperature for electronic devices. Angewandte Chemie - International Edition 52 (52) : 14121-14126. ScholarBank@NUS Repository. https://doi.org/10.1002/anie.201306086
Abstract: Born at its final resting place: Moderate etching by a hydrogen plasma during plasma-enhanced chemical vapor deposition led to a critical equilibrium state of graphene edge growth in which graphene hexagonal single crystals or continuous graphene films were produced directly on dielectric substrates at 400 °C without a catalyst (see picture). The direct use of the resulting high-quality graphene in devices avoids troublesome transfer processes. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Source Title: Angewandte Chemie - International Edition
URI: http://scholarbank.nus.edu.sg/handle/10635/75835
ISSN: 14337851
DOI: 10.1002/anie.201306086
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