Please use this identifier to cite or link to this item:
https://doi.org/10.1002/anie.201306086
DC Field | Value | |
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dc.title | Critical crystal growth of graphene on dielectric substrates at low temperature for electronic devices | |
dc.contributor.author | Wei, D. | |
dc.contributor.author | Lu, Y. | |
dc.contributor.author | Han, C. | |
dc.contributor.author | Niu, T. | |
dc.contributor.author | Chen, W. | |
dc.contributor.author | Wee, A.T.S. | |
dc.date.accessioned | 2014-06-23T05:35:14Z | |
dc.date.available | 2014-06-23T05:35:14Z | |
dc.date.issued | 2013-12-23 | |
dc.identifier.citation | Wei, D., Lu, Y., Han, C., Niu, T., Chen, W., Wee, A.T.S. (2013-12-23). Critical crystal growth of graphene on dielectric substrates at low temperature for electronic devices. Angewandte Chemie - International Edition 52 (52) : 14121-14126. ScholarBank@NUS Repository. https://doi.org/10.1002/anie.201306086 | |
dc.identifier.issn | 14337851 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/75835 | |
dc.description.abstract | Born at its final resting place: Moderate etching by a hydrogen plasma during plasma-enhanced chemical vapor deposition led to a critical equilibrium state of graphene edge growth in which graphene hexagonal single crystals or continuous graphene films were produced directly on dielectric substrates at 400 °C without a catalyst (see picture). The direct use of the resulting high-quality graphene in devices avoids troublesome transfer processes. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1002/anie.201306086 | |
dc.source | Scopus | |
dc.subject | chemical vapor deposition | |
dc.subject | crystal growth | |
dc.subject | graphene | |
dc.subject | nanomaterials | |
dc.subject | scanning probe microscopy | |
dc.type | Article | |
dc.contributor.department | PHYSICS | |
dc.contributor.department | CHEMISTRY | |
dc.description.doi | 10.1002/anie.201306086 | |
dc.description.sourcetitle | Angewandte Chemie - International Edition | |
dc.description.volume | 52 | |
dc.description.issue | 52 | |
dc.description.page | 14121-14126 | |
dc.description.coden | ACIEF | |
dc.identifier.isiut | 000328531100043 | |
Appears in Collections: | Staff Publications |
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