Carrier multiplication in a photodetector driven by diamond cold cathode

Please use this identifier to cite or link to this item: https://doi.org/10.1109/IVNC.2012.6316837

Title:	Carrier multiplication in a photodetector driven by diamond cold cathode
Authors:	Masuzawa, T. Kuniyoshi, S. Onishi, M. Saito, I. Koh, A.T.T. Chua, D.H.C. Yamada, T. Okano, K.
Keywords:	amorphous selenium diamond cold cathode photodetector
Issue Date:	2012
Citation:	Masuzawa, T.,Kuniyoshi, S.,Onishi, M.,Saito, I.,Koh, A.T.T.,Chua, D.H.C.,Yamada, T.,Okano, K. (2012). Carrier multiplication in a photodetector driven by diamond cold cathode. Technical Digest - 25th International Vacuum Nanoelectronics Conference, IVNC 2012 : 64-65. ScholarBank@NUS Repository. https://doi.org/10.1109/IVNC.2012.6316837
Abstract:	In this study, key conditions of a carrier multiplication in amorphous selenium (a-Se) films were discussed in order to increase a sensitivity of vacuum tube photodetectors. The structural and electronic properties were analyzed for a-Se films with different structure and composition. This study will open up the possibility of developing new photodetectors, such as low-dose x-ray diagnosis systems or portable photon-counting devices. © 2012 IEEE.
Source Title:	Technical Digest - 25th International Vacuum Nanoelectronics Conference, IVNC 2012
URI:	http://scholarbank.nus.edu.sg/handle/10635/75215
ISBN:	9781467319812
DOI:	10.1109/IVNC.2012.6316837
Appears in Collections:	Staff Publications

There are no files associated with this item.

Check