Please use this identifier to cite or link to this item: https://doi.org/10.1109/IVNC.2012.6316837
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dc.titleCarrier multiplication in a photodetector driven by diamond cold cathode
dc.contributor.authorMasuzawa, T.
dc.contributor.authorKuniyoshi, S.
dc.contributor.authorOnishi, M.
dc.contributor.authorSaito, I.
dc.contributor.authorKoh, A.T.T.
dc.contributor.authorChua, D.H.C.
dc.contributor.authorYamada, T.
dc.contributor.authorOkano, K.
dc.date.accessioned2014-06-19T09:33:47Z
dc.date.available2014-06-19T09:33:47Z
dc.date.issued2012
dc.identifier.citationMasuzawa, T.,Kuniyoshi, S.,Onishi, M.,Saito, I.,Koh, A.T.T.,Chua, D.H.C.,Yamada, T.,Okano, K. (2012). Carrier multiplication in a photodetector driven by diamond cold cathode. Technical Digest - 25th International Vacuum Nanoelectronics Conference, IVNC 2012 : 64-65. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/IVNC.2012.6316837" target="_blank">https://doi.org/10.1109/IVNC.2012.6316837</a>
dc.identifier.isbn9781467319812
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/75215
dc.description.abstractIn this study, key conditions of a carrier multiplication in amorphous selenium (a-Se) films were discussed in order to increase a sensitivity of vacuum tube photodetectors. The structural and electronic properties were analyzed for a-Se films with different structure and composition. This study will open up the possibility of developing new photodetectors, such as low-dose x-ray diagnosis systems or portable photon-counting devices. © 2012 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/IVNC.2012.6316837
dc.sourceScopus
dc.subjectamorphous selenium
dc.subjectdiamond cold cathode
dc.subjectphotodetector
dc.typeConference Paper
dc.contributor.departmentMATERIALS SCIENCE AND ENGINEERING
dc.description.doi10.1109/IVNC.2012.6316837
dc.description.sourcetitleTechnical Digest - 25th International Vacuum Nanoelectronics Conference, IVNC 2012
dc.description.page64-65
dc.identifier.isiutNOT_IN_WOS
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