Please use this identifier to cite or link to this item: https://doi.org/10.4028/0-87849-471-5.227
Title: Annihilation of threading dislocations in regrown GaN on electrochemically etched nanoporous GaN template with optimization of buffer layer growth
Authors: Soh, C.B.
Hartono, H.
Chow, S.Y.
Chua, S.J. 
Issue Date: 2008
Source: Soh, C.B.,Hartono, H.,Chow, S.Y.,Chua, S.J. (2008). Annihilation of threading dislocations in regrown GaN on electrochemically etched nanoporous GaN template with optimization of buffer layer growth. Advanced Materials Research 31 : 227-229. ScholarBank@NUS Repository. https://doi.org/10.4028/0-87849-471-5.227
Abstract: Nanoporous GaN template has been fabricated by electrochemical etching to give hexagonal pits with nano-scale pores of size 20-50 nm in the underlying grains. Electrochemical etching at The effect of GaN buffer layer grown at various temperatures from 650°C to 1015°C on these as-fabricated nano-pores templates are investigated by transmission electron microscopy. The buffer layer grown at the optimized temperature of 850°C partially fill up the pores and voids with annihilation of threading dislocations, serving as an excellent template for high-quality GaN growth. This phenomenon is, however not observed for the samples grown with other temperature buffer layers. The PL spectrum for the regrowth GaN on nanoporous GaN template also shows an enhancement of PL intensity for GaN peak compared to as-grown GaN template, which is indicative of its higher crystal quality. This makes it as a suitable template for subsequent device fabrication.
Source Title: Advanced Materials Research
URI: http://scholarbank.nus.edu.sg/handle/10635/69418
ISBN: 0878494715
ISSN: 10226680
DOI: 10.4028/0-87849-471-5.227
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