Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2192089
Title: Control of p - and n -type conductivities in P doped ZnO thin films by using radio-frequency sputtering
Authors: Yu, Z.G.
Wu, P.
Gong, H. 
Issue Date: 2006
Source: Yu, Z.G., Wu, P., Gong, H. (2006). Control of p - and n -type conductivities in P doped ZnO thin films by using radio-frequency sputtering. Applied Physics Letters 88 (13) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2192089
Abstract: The conduction type of P doped ZnO thin films using Zn3 P2 dopant source can be controlled by adjusting the oxygen partial pressure by means of radio-frequency sputtering. Under an optimal oxygen partial pressure of 5%, p -type ZnO thin films were obtained with a hole concentration of 1.93× 1016 -3.84× 1019 cm-3. Under a growth condition of extremely low oxygen partial pressure, P doped ZnO thin films exhibit n -type conduction with a hole concentration of 8.34× 1017 -3.1× 1019 cm-3. This research not only achieved significant technical advance in the fabrication of p -type ZnO but also gained critical advance in fundamental understanding of the governing mechanism of p -type ZnO. © 2006 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/64834
ISSN: 00036951
DOI: 10.1063/1.2192089
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