Control of p - and n -type conductivities in P doped ZnO thin films by using radio-frequency sputtering

Abstract

The conduction type of P doped ZnO thin films using Zn3 P2 dopant source can be controlled by adjusting the oxygen partial pressure by means of radio-frequency sputtering. Under an optimal oxygen partial pressure of 5%, p -type ZnO thin films were obtained with a hole concentration of 1.93× 1016 -3.84× 1019 cm-3. Under a growth condition of extremely low oxygen partial pressure, P doped ZnO thin films exhibit n -type conduction with a hole concentration of 8.34× 1017 -3.1× 1019 cm-3. This research not only achieved significant technical advance in the fabrication of p -type ZnO but also gained critical advance in fundamental understanding of the governing mechanism of p -type ZnO. © 2006 American Institute of Physics.