Hot-carrier degradation mechanism in narrow- and wide-channel n-MOSFET's with recessed LOCOS isolation structure

Please use this identifier to cite or link to this item: https://doi.org/10.1109/55.823578

Title:	Hot-carrier degradation mechanism in narrow- and wide-channel n-MOSFET's with recessed LOCOS isolation structure
Authors:	Yue, J.M.P. Chim, W.K. Cho, B.J. Chan, D.S.H. Qin, W.H. Kim, Y.-B. Jang, S.-A. Yeo, I.-S.
Issue Date:	Mar-2000
Citation:	Yue, J.M.P.,Chim, W.K.,Cho, B.J.,Chan, D.S.H.,Qin, W.H.,Kim, Y.-B.,Jang, S.-A.,Yeo, I.-S. (2000-03). Hot-carrier degradation mechanism in narrow- and wide-channel n-MOSFET's with recessed LOCOS isolation structure. IEEE Electron Device Letters 21 (3) : 130-132. ScholarBank@NUS Repository. https://doi.org/10.1109/55.823578
Abstract:	Narrow-channel n-MOSFET's with recessed LOCOS (R-LOCOS) isolation structure exhibits less hot carrier-induced degradation than wide-channel n-MOSFET's, but the degradation mechanism of both devices is the same. This new finding is explained by the fact that in deep submicron MOSFET's with ultra-thin gate oxide, the dominant factor deciding the degradation behavior in narrow- and wide-channel devices is the vertical electric field effect rather than the mechanical stress effect.
Source Title:	IEEE Electron Device Letters
URI:	http://scholarbank.nus.edu.sg/handle/10635/62290
ISSN:	07413106
DOI:	10.1109/55.823578
Appears in Collections:	Staff Publications

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