Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/62266
Title: Growth of compressive strained in GaAs/GaAs multiple quantum well structures by MBE
Authors: Sanjeev, S.
Vaya, P.R.
Chua, S.J. 
Shen, Y.
O'Connor, J.
King, V.B.
Issue Date: Jul-1997
Source: Sanjeev, S.,Vaya, P.R.,Chua, S.J.,Shen, Y.,O'Connor, J.,King, V.B. (1997-07). Growth of compressive strained in GaAs/GaAs multiple quantum well structures by MBE. Indian Journal of Pure and Applied Physics 35 (7) : 448-451. ScholarBank@NUS Repository.
Abstract: The aim of the present work is to grow compressive strained InGaAs/GaAs quantum well structures and study energy levels in them. Multiple layers of 20 InGaAs/GaAs quantum wells were grown by MBE. The energy for the C1-HH1 transition of the grown structure was measured using Photoluminescence and Electroluminescence. Low energy ion scattering was carried out on the samples to study the depth profile of the multiple quantum wells.
Source Title: Indian Journal of Pure and Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/62266
ISSN: 00195596
Appears in Collections:Staff Publications

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