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Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/62266
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dc.titleGrowth of compressive strained in GaAs/GaAs multiple quantum well structures by MBE
dc.contributor.authorSanjeev, S.
dc.contributor.authorVaya, P.R.
dc.contributor.authorChua, S.J.
dc.contributor.authorShen, Y.
dc.contributor.authorO'Connor, J.
dc.contributor.authorKing, V.B.
dc.date.accessioned2014-06-17T06:49:12Z
dc.date.available2014-06-17T06:49:12Z
dc.date.issued1997-07
dc.identifier.citationSanjeev, S.,Vaya, P.R.,Chua, S.J.,Shen, Y.,O'Connor, J.,King, V.B. (1997-07). Growth of compressive strained in GaAs/GaAs multiple quantum well structures by MBE. Indian Journal of Pure and Applied Physics 35 (7) : 448-451. ScholarBank@NUS Repository.
dc.identifier.issn00195596
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/62266
dc.description.abstractThe aim of the present work is to grow compressive strained InGaAs/GaAs quantum well structures and study energy levels in them. Multiple layers of 20 InGaAs/GaAs quantum wells were grown by MBE. The energy for the C1-HH1 transition of the grown structure was measured using Photoluminescence and Electroluminescence. Low energy ion scattering was carried out on the samples to study the depth profile of the multiple quantum wells.
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.sourcetitleIndian Journal of Pure and Applied Physics
dc.description.volume35
dc.description.issue7
dc.description.page448-451
dc.identifier.isiutNOT_IN_WOS
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