Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2884534
Title: Investigation of the V-pit related morphological and optical properties of InGaNGaN multiple quantum wells
Authors: Lin, F. 
Xiang, N. 
Chen, P.
Chow, S.Y.
Chua, S.J.
Issue Date: 2008
Source: Lin, F.,Xiang, N.,Chen, P.,Chow, S.Y.,Chua, S.J. (2008). Investigation of the V-pit related morphological and optical properties of InGaNGaN multiple quantum wells. Journal of Applied Physics 103 (4) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2884534
Abstract: In this work, the effects of large V-pits on the morphological and optical properties of InGaNGaN multiple quantum wells (MQWs) were studied using scanning electron microscopy, transmission electron microscopy, and photoluminescence. InGaNGaN MQWs with high-density large V-pits were grown by metal organic chemical vapor deposition. In addition to the regular c -plane MQWs, the MQWs grown on the {10 1- 1} faceted sidewalls of the V-pits were also observed, which gave much higher emission energies than those of the c -plane MQWs. Furthermore, when the lowerature GaN buffer was very thin, the {11 2- m} (m2) faceted sidewalls of the V-pits were observed. It was then found that MQWs grown on such sidewalls had emission energies between those of the c -plane MQWs and those of the {10 1- 1} faceted sidewall MQWs. © 2008 American Institute of Physics.
Source Title: Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/56406
ISSN: 00218979
DOI: 10.1063/1.2884534
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