Investigation of the V-pit related morphological and optical properties of InGaNGaN multiple quantum wells

Abstract

In this work, the effects of large V-pits on the morphological and optical properties of InGaNGaN multiple quantum wells (MQWs) were studied using scanning electron microscopy, transmission electron microscopy, and photoluminescence. InGaNGaN MQWs with high-density large V-pits were grown by metal organic chemical vapor deposition. In addition to the regular c -plane MQWs, the MQWs grown on the {10 1- 1} faceted sidewalls of the V-pits were also observed, which gave much higher emission energies than those of the c -plane MQWs. Furthermore, when the lowerature GaN buffer was very thin, the {11 2- m} (m2) faceted sidewalls of the V-pits were observed. It was then found that MQWs grown on such sidewalls had emission energies between those of the c -plane MQWs and those of the {10 1- 1} faceted sidewall MQWs. © 2008 American Institute of Physics.