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|Title:||Impact of buried capping layer on electrical stablity of advanced interconnects|
|Citation:||Yiang, K.Y., Yoo, W.J., Krishnamoorthy, A. (2005). Impact of buried capping layer on electrical stablity of advanced interconnects. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 23 (4) : 1499-1503. ScholarBank@NUS Repository. https://doi.org/10.1116/1.1978895|
|Abstract:||Electrical leakage and breakdown of low-dielectric constant (low- k) dielectrics are increasingly becoming major reliability issues as inter-metal spacings in interconnects scale towards the 0.1 μm technology node. In Cu damascene structures, these issues are greatly alleviated by the retention of a thin layer of hardmask, which is also known as buried capping layer (BCL), after chemical-mechanical polishing. It is found that a BCL of 100 Å thickness in CuSiOC interdigitated comb structures effectively reduces the leakage current by one order of magnitude and improves breakdown strength by a factor of 1.5-2. In addition, the BCL is able to prevent the formation of process-induced traps in the low- k dielectric. These findings can have important and positive reliability considerations for Culow-k integration schemes. © 2005 American Vacuum Society.|
|Source Title:||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|Appears in Collections:||Staff Publications|
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