Please use this identifier to cite or link to this item:
|Title:||Impact of buried capping layer on electrical stablity of advanced interconnects|
|Citation:||Yiang, K.Y., Yoo, W.J., Krishnamoorthy, A. (2005). Impact of buried capping layer on electrical stablity of advanced interconnects. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 23 (4) : 1499-1503. ScholarBank@NUS Repository. https://doi.org/10.1116/1.1978895|
|Abstract:||Electrical leakage and breakdown of low-dielectric constant (low- k) dielectrics are increasingly becoming major reliability issues as inter-metal spacings in interconnects scale towards the 0.1 μm technology node. In Cu damascene structures, these issues are greatly alleviated by the retention of a thin layer of hardmask, which is also known as buried capping layer (BCL), after chemical-mechanical polishing. It is found that a BCL of 100 Å thickness in CuSiOC interdigitated comb structures effectively reduces the leakage current by one order of magnitude and improves breakdown strength by a factor of 1.5-2. In addition, the BCL is able to prevent the formation of process-induced traps in the low- k dielectric. These findings can have important and positive reliability considerations for Culow-k integration schemes. © 2005 American Vacuum Society.|
|Source Title:||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Nov 14, 2018
WEB OF SCIENCETM
checked on Nov 6, 2018
checked on Oct 13, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.