Please use this identifier to cite or link to this item: https://doi.org/10.1116/1.1978895
Title: Impact of buried capping layer on electrical stablity of advanced interconnects
Authors: Yiang, K.Y.
Yoo, W.J. 
Krishnamoorthy, A.
Issue Date: 2005
Citation: Yiang, K.Y., Yoo, W.J., Krishnamoorthy, A. (2005). Impact of buried capping layer on electrical stablity of advanced interconnects. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 23 (4) : 1499-1503. ScholarBank@NUS Repository. https://doi.org/10.1116/1.1978895
Abstract: Electrical leakage and breakdown of low-dielectric constant (low- k) dielectrics are increasingly becoming major reliability issues as inter-metal spacings in interconnects scale towards the 0.1 μm technology node. In Cu damascene structures, these issues are greatly alleviated by the retention of a thin layer of hardmask, which is also known as buried capping layer (BCL), after chemical-mechanical polishing. It is found that a BCL of 100 Å thickness in CuSiOC interdigitated comb structures effectively reduces the leakage current by one order of magnitude and improves breakdown strength by a factor of 1.5-2. In addition, the BCL is able to prevent the formation of process-induced traps in the low- k dielectric. These findings can have important and positive reliability considerations for Culow-k integration schemes. © 2005 American Vacuum Society.
Source Title: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
URI: http://scholarbank.nus.edu.sg/handle/10635/56261
ISSN: 10711023
DOI: 10.1116/1.1978895
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