Please use this identifier to cite or link to this item:
https://doi.org/10.1116/1.1978895
DC Field | Value | |
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dc.title | Impact of buried capping layer on electrical stablity of advanced interconnects | |
dc.contributor.author | Yiang, K.Y. | |
dc.contributor.author | Yoo, W.J. | |
dc.contributor.author | Krishnamoorthy, A. | |
dc.date.accessioned | 2014-06-17T02:52:35Z | |
dc.date.available | 2014-06-17T02:52:35Z | |
dc.date.issued | 2005 | |
dc.identifier.citation | Yiang, K.Y., Yoo, W.J., Krishnamoorthy, A. (2005). Impact of buried capping layer on electrical stablity of advanced interconnects. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 23 (4) : 1499-1503. ScholarBank@NUS Repository. https://doi.org/10.1116/1.1978895 | |
dc.identifier.issn | 10711023 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/56261 | |
dc.description.abstract | Electrical leakage and breakdown of low-dielectric constant (low- k) dielectrics are increasingly becoming major reliability issues as inter-metal spacings in interconnects scale towards the 0.1 μm technology node. In Cu damascene structures, these issues are greatly alleviated by the retention of a thin layer of hardmask, which is also known as buried capping layer (BCL), after chemical-mechanical polishing. It is found that a BCL of 100 Å thickness in CuSiOC interdigitated comb structures effectively reduces the leakage current by one order of magnitude and improves breakdown strength by a factor of 1.5-2. In addition, the BCL is able to prevent the formation of process-induced traps in the low- k dielectric. These findings can have important and positive reliability considerations for Culow-k integration schemes. © 2005 American Vacuum Society. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1116/1.1978895 | |
dc.source | Scopus | |
dc.type | Article | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.doi | 10.1116/1.1978895 | |
dc.description.sourcetitle | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | |
dc.description.volume | 23 | |
dc.description.issue | 4 | |
dc.description.page | 1499-1503 | |
dc.description.coden | JVTBD | |
dc.identifier.isiut | 000231211500028 | |
Appears in Collections: | Staff Publications |
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