Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2896611
Title: Epitaxially grown n-ZnOMgOTiN n+ -Si (111) heterostructured light-emitting diode
Authors: Sun, X.W.
Zhao, J.L.
Tan, S.T.
Tan, L.H.
Tung, C.H.
Lo, G.Q.
Kwong, D.L.
Zhang, Y.W.
Li, X.M.
Teo, K.L. 
Issue Date: 2008
Source: Sun, X.W., Zhao, J.L., Tan, S.T., Tan, L.H., Tung, C.H., Lo, G.Q., Kwong, D.L., Zhang, Y.W., Li, X.M., Teo, K.L. (2008). Epitaxially grown n-ZnOMgOTiN n+ -Si (111) heterostructured light-emitting diode. Applied Physics Letters 92 (11) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2896611
Abstract: Epitaxial n-ZnOMgOTiN n+ -Si heterostructured light-emitting diodes have been fabricated. The epitaxial growth of MgOTiN on Si(111) was established by pulsed laser deposition, which was further employed as a buffer layer for epitaxial growth of ZnO layer by metal-organic chemical-vapor deposition. Good epitaxial quality was found using high-resolution x-ray diffraction and transmission electron microscopy. A strong wide electroluminescence band, ranging from 350 to 850 nm and centered at ∼530 nm, was observed from the diode when a positive voltage was applied on Si substrate. The diode exhibited a linear light-output-current characteristic with an injection current up to 192 mA. © 2008 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/55903
ISSN: 00036951
DOI: 10.1063/1.2896611
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