Epitaxially grown n-ZnOMgOTiN n+ -Si (111) heterostructured light-emitting diode

Abstract

Epitaxial n-ZnOMgOTiN n+ -Si heterostructured light-emitting diodes have been fabricated. The epitaxial growth of MgOTiN on Si(111) was established by pulsed laser deposition, which was further employed as a buffer layer for epitaxial growth of ZnO layer by metal-organic chemical-vapor deposition. Good epitaxial quality was found using high-resolution x-ray diffraction and transmission electron microscopy. A strong wide electroluminescence band, ranging from 350 to 850 nm and centered at ∼530 nm, was observed from the diode when a positive voltage was applied on Si substrate. The diode exhibited a linear light-output-current characteristic with an injection current up to 192 mA. © 2008 American Institute of Physics.