Please use this identifier to cite or link to this item:
|Title:||Enhancement mode GaAs metal-oxide-semiconductor field-effect-transistor integrated with thin AlN surface passivation layer and silicon/phosphorus coimplanted source/drain|
|Citation:||Gao, F., Lee, S.J., Kwong, D.L. (2009). Enhancement mode GaAs metal-oxide-semiconductor field-effect-transistor integrated with thin AlN surface passivation layer and silicon/phosphorus coimplanted source/drain. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 27 (1) : 214-217. ScholarBank@NUS Repository. https://doi.org/10.1116/1.3025909|
|Abstract:||By using thin AlN film as a passivation layer between the GaAs and Hf O2, GaAs metal-oxide-semiconductor (MOS) devices exhibited well-behaved accumulation and inversion capacitance-voltage characteristics with low leakage current of 6× 10-5 A cm2 at Vg =1 V and interface state density of ∼4.9× 1010 cm-2 eV-1. In order to improve the N+ source/drain activation efficiency, the SiP coimplantation technique was adapted to fabricate GaAs n -type metal-oxide-semiconductor field-effect-transistor (MOSFET). High quality N+ P GaAs junction was achieved with extremely low junction leakage current of 3× 10-6 A cm2 at reverse bias of 1 V and high forward current to reverse current ratio of Iforward Ireverse ∼ 107 at GaAs source/drain junction. GaAs n -MOSFETs integrated with Hf O2 gate dielectric and TaN gate electrode were fabricated by using AlN passivation layer and SiP coimplantation techniques. The results show that our GaAs n -MOSFETs operate in enhancement mode with Ion Ioff ratio of approximately six orders and good transfer and output characteristics. © 2009 American Vacuum Society.|
|Source Title:||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jul 19, 2018
WEB OF SCIENCETM
checked on Jul 3, 2018
checked on Jul 6, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.